Instituto de energía solar

Device characterization is essential in order to gather feedback for growth or manufacturing processes and device simulations. We provide not only the measurements but also an accurate explanation of the results. Several techniques are offered in order to characterize electrical or optical device performance such as:

• Four point I-V: Current-voltage measurements. This measurement is typically applied under different standard scenarios:
  
  
  • Dark I-V
  • Light I-V
  • Temperature-dependent I-V
  • Four Point Probe Station: This allows us to measure microscopic patterns, such as TLM ones.

• Quantum Efficiency (QE) – measurement of the spectral response of the device covering a wide range of wavelengths: 300-1840 nm.
• Electroluminescence Spectroscopy and Mapping (EL) – Both techniques are useful to analyze structural defects in the semiconductor and metals as well as to reveal impurity levels, recombination mechanisms and determine the bandgap of the materials. Requires a processed device.
• Photoluminescence (PL) - Useful to analyze recombination mechanisms, impurity levels as well as quality and bandgap of the materials. There is no requirement of device processing.

All characterization techniques can be performed as a function of the temperature inside a cryostat (7K to 300K).